¶ … Nucleation and propagation of dislocations in nano-Crystalline FCC metals
The normal perception regarding GBs (grain boundaries) is that they are found to have been playing the role of both, sinks and sources, for the dislocations in a condition in which there is a reduction in grain size to a nanometer regime in face-centred cubic (FCC) metals. Molecular dynamics (MD) computer simulations (Van Swygenhoven et al., 2001) is the basis of this mechanism, in which GB emits partial dislocation, which is absorbed in opposite and neighboring areas after travelling through the whole grain. It has been ascertained that in few materials (like A1) leading partial's emission is often followed with trailing partials. On the contrary, in other materials (like Cu and Ni) the entire grain witnesses SF (stacking fault) defect being transected rather than tailing partial. On the basis of absolute value of stable SF energy, a model has been put forward so that different dislocation characters evident in the MD can be explained and the association between splitting distance with the critical grain size for the emission of the trailing can be recognized (Van Swygenhoven et al., 2002). All the simulation results cannot be explained by this approach, which although is very attractive. The results published can help us in understanding that trailing and leading partial dislocations are only evident in the simulation of A1. Trailing partials were not found for Ni and CU (with higher and lower stable SF energy values, respectively, in regard to the potentials used). It is clear that the occurrence of partial or full dislocations cannot be verified by using absolute value of splitting distance and SF on the basis of nucleation criterion (Froseth et al., 2006).
It has been examined that, for the understanding of MD results, an individual must take into account both SF energies, i.e. stable as well as unstable state with the help of a generalized SF energy curve (Derlet et al., 2003a; 2003b). This approach enables us to understand the simple explanations towards all MD results, when the leading partial has been nucleated after which the ratio between unstable and stable SF energies is near to unite the energy barrier of the following partial which is relatively smaller for the material. It would also be explained as whenever the ratio is close to unity, the nucleation of following partial is expected to be in the timescale of MD simulation. This only happens in Al, not in Cu and Ni, which explains the reason behind the full dislocations as seen in the MD simulation of Al. So we cannot over look the fact that the observation related to the extended pile of faults in Cu as well as Ni could be the reason of the of MD simulation timescale. Furthermore, as long as the experiment goes the dislocation activity will nucleate both leading as well as trailing partial, ultimately full dislocation will happen. This is so as there in no experimental proof of increasing density of SFs after tensile distortion in nanocystalline (nc) Ni and Cu. With the help of electron microscopy examination it had been seen that there are isolated large SFs (Van Swygenhoven et al., 2003). Through lab examination of X-ray in nc-Ni, we have come to know that the act of reversibility of diffraction comes to peak during the process of plastic distortion. It demonstrates that there is lack of permanent residual diffraction network and helps us in supporting the ideology that nc-GBs will absorb leading as well as trailing partials that are predominantly emitted (Van Swygenhoven, 2002; Froseth et al., 2006).
There are numerous other very unusual and easily noticed details that are being observed through atomistic simulation other then issues related to trailing and leading partials (Froseth et al., 2006):
(1) After emission an extreme hydrostatic pressure is relived before nucleation (Yamakov et al., 2001; 2003);
(2) During emission, atomic shuffles and free volume migration, due to high stress, also occurs (Froseth el al, 2006).
(3) The distance that shows separation between trailing and leading partials is determined by both stress distribution of GB and the path on which dislocation travels (Derlet et al., 2003b; Forseth et al., 2006).
Many analytical models are generated in response to the results of the above mentioned observation. But in all the models the common elements are that they all carried out a small size dependent nucleation criterion having the ultimate goal to follow the pattern that were observed in Hall-Perch behavior (Yamakov et al., 2004), 10 times increased strain rate sensitivity (Froseth et al., 2004) and low value measured for the activation volume (10-20b) (Van Swygenhoven et al., 2004;...
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